SIGETRONICS, The Republic of Korea - Komachine Supplier Profile and Product List

- Sigetronics is a specialized fabless semiconductor company, grown from its expertise in Electrostatic Discharge (ESD) protection devices, including TVS diodes, offering diverse circuit protection solutions for electronic devices. The company focuses on developing high-sensitivity photodiode sensors capable of detecting wavelengths from ultraviolet (UV) to infrared (IR), alongside next-generation power semiconductors such as Gallium Nitride (GaN) power devices. Leveraging its proprietary M-FAB production infrastructure, it provides comprehensive semiconductor solutions and foundry services encompassing ESD, sensors, power semiconductors, and GaN Power RF. The company possesses advanced manufacturing technologies based on various cutting-edge materials including Silicon (Si), Gallium Arsenide (GaAs), Gallium Nitride (GaN), and Silicon Carbide (SiC).Sigetronics is a specialized fabless semiconductor company, grown from its expertise in Electrostatic Discharge (ESD) protection devices, including TVS diodes, offering diverse circuit protection solutions for electronic devices. The company focuses on developing high-sensitivity photodiode sensors capable of detecting wavelengths from ultraviolet (UV) to infrared (IR), alongside next-generation power semiconductors such as Gallium Nitride (GaN) power devices. Leveraging its proprietary M-FAB production infrastructure, it provides comprehensive semiconductor solutions and foundry services encompassing ESD, sensors, power semiconductors, and GaN Power RF. The company possesses advanced manufacturing technologies based on various cutting-edge materials including Silicon (Si), Gallium Arsenide (GaAs), Gallium Nitride (GaN), and Silicon Carbide (SiC).
- ESD Protection Devices: A comprehensive range of products including Zener Diodes, TVS Diodes, Flip Chip TVS, Zener Diode Packages, Silicon Resistors/Jumpers, Low Cap TVS Diodes, Ultra Low Cap TVS Diodes, TVS Diode Arrays, and ESD/EMI Filters. Product models include TVS Series, FCAD Series, HPD Series, SR,SUB Series, UL,ULB Series, SM,TAZ07 Series, and EF Series. The company has successfully localized ultra-low capacitance (0.25-0.45pF) TVS diodes for high-speed interfaces.ESD Protection Devices: A comprehensive range of products including Zener Diodes, TVS Diodes, Flip Chip TVS, Zener Diode Packages, Silicon Resistors/Jumpers, Low Cap TVS Diodes, Ultra Low Cap TVS Diodes, TVS Diode Arrays, and ESD/EMI Filters. Product models include TVS Series, FCAD Series, HPD Series, SR,SUB Series, UL,ULB Series, SM,TAZ07 Series, and EF Series. The company has successfully localized ultra-low capacitance (0.25-0.45pF) TVS diodes for high-speed interfaces.
- Sensor Devices: Development and supply of Broad-band Photodiodes (BB-PD), Avalanche Photodiodes (APD), and IR LEDs (GaAs Infrared Chips). SG Series and SGF Series are among its product models. These technologies are applicable in high-value-added fields such as bio-signal measurement in healthcare wearables, precision sensing in industrial equipment, and LiDAR for autonomous vehicles.Sensor Devices: Development and supply of Broad-band Photodiodes (BB-PD), Avalanche Photodiodes (APD), and IR LEDs (GaAs Infrared Chips). SG Series and SGF Series are among its product models. These technologies are applicable in high-value-added fields such as bio-signal measurement in healthcare wearables, precision sensing in industrial equipment, and LiDAR for autonomous vehicles.
- Power Semiconductors: Development of Power MOSFETs, Gallium Nitride (GaN) Power FETs, Silicon Carbide (SiC) devices, and Schottky Barrier Diodes (SBD). TST,PM Series are part of its product lineup. The company has developed 650V GaN-on-Si power devices on 8-inch silicon wafers and is pursuing commercialization through foundry services with DB HiTek. It has also successfully localized 'space-grade Schottky Barrier Diodes (SBD)' for space and defense applications.Power Semiconductors: Development of Power MOSFETs, Gallium Nitride (GaN) Power FETs, Silicon Carbide (SiC) devices, and Schottky Barrier Diodes (SBD). TST,PM Series are part of its product lineup. The company has developed 650V GaN-on-Si power devices on 8-inch silicon wafers and is pursuing commercialization through foundry services with DB HiTek. It has also successfully localized 'space-grade Schottky Barrier Diodes (SBD)' for space and defense applications.
- RF Semiconductors: Development and commercialization of GaN RF HEMT (S-band, X-band) devices. Successful commercialization of an S-band (2-4GHz) GaN RF power semiconductor lineup (10W, 30W, 50W, 150W class). These are applicable in high-power RF systems such as military S-band radar, electronic warfare, jamming systems, aviation/ground communication equipment, and test equipment.RF Semiconductors: Development and commercialization of GaN RF HEMT (S-band, X-band) devices. Successful commercialization of an S-band (2-4GHz) GaN RF power semiconductor lineup (10W, 30W, 50W, 150W class). These are applicable in high-power RF systems such as military S-band radar, electronic warfare, jamming systems, aviation/ground communication equipment, and test equipment.
- Foundry Services: Operation of its own Multi-project FAB (M-FAB), offering manufacturing services for devices based on Si, GaAs, GaN, and SiC. The company has established an M-FAB production infrastructure with a monthly capacity of 20,000 wafers for specialized semiconductors. This integrated platform covers everything from Epi-growth to device design and process technology.Foundry Services: Operation of its own Multi-project FAB (M-FAB), offering manufacturing services for devices based on Si, GaAs, GaN, and SiC. The company has established an M-FAB production infrastructure with a monthly capacity of 20,000 wafers for specialized semiconductors. This integrated platform covers everything from Epi-growth to device design and process technology.
- Expertise as a specialized fabless semiconductor company, driven by its foundational ESD protection device technology. Securing technological superiority through advanced manufacturing capabilities based on diverse cutting-edge materials including Si, GaAs, GaN, and SiC.Expertise as a specialized fabless semiconductor company, driven by its foundational ESD protection device technology. Securing technological superiority through advanced manufacturing capabilities based on diverse cutting-edge materials including Si, GaAs, GaN, and SiC.
- Establishment of an integrated M-FAB (Multi-project FAB) production infrastructure, encompassing Epi-growth, device design, and process technology. This ensures a monthly production capacity of 20,000 wafers, enhancing production efficiency and quality competitiveness.Establishment of an integrated M-FAB (Multi-project FAB) production infrastructure, encompassing Epi-growth, device design, and process technology. This ensures a monthly production capacity of 20,000 wafers, enhancing production efficiency and quality competitiveness.
- Leadership in the next-generation compound semiconductor market through the first domestic development of GaN power semiconductors, establishment of a 6-inch GaN power FAB, and successful commercialization of S-band RF power semiconductors. Full process implementation of GaN RF power semiconductors using 100% domestic technology, based on core technologies transferred from ETRI.Leadership in the next-generation compound semiconductor market through the first domestic development of GaN power semiconductors, establishment of a 6-inch GaN power FAB, and successful commercialization of S-band RF power semiconductors. Full process implementation of GaN RF power semiconductors using 100% domestic technology, based on core technologies transferred from ETRI.
- High reliability of automotive flip-chip ESD protection devices and the development of space-grade Schottky Barrier Diodes for extreme environment applications. Achievement of high yield rates (over 70%) through 'optical photolithography' technology for patterning semiconductor substrates using lasers.High reliability of automotive flip-chip ESD protection devices and the development of space-grade Schottky Barrier Diodes for extreme environment applications. Achievement of high yield rates (over 70%) through 'optical photolithography' technology for patterning semiconductor substrates using lasers.
- Strengthening technological competitiveness through continuous R&D investment, participation in numerous national projects, and holding 33 patents. A strong B2B business model focused on rapid development and commercialization of new products in response to major corporate clients' needs.Strengthening technological competitiveness through continuous R&D investment, participation in numerous national projects, and holding 33 patents. A strong B2B business model focused on rapid development and commercialization of new products in response to major corporate clients' needs.
- Proprietary technology to overcome warping and cracking issues caused by thermal expansion coefficient differences during the development of 8-inch silicon wafer-based GaN power devices. Strategic plans to accelerate market penetration in smartwatches, smart rings, and medical devices with high-performance sensors.Proprietary technology to overcome warping and cracking issues caused by thermal expansion coefficient differences during the development of 8-inch silicon wafer-based GaN power devices. Strategic plans to accelerate market penetration in smartwatches, smart rings, and medical devices with high-performance sensors.
- Various electronic devices, including smartphones and displays.Various electronic devices, including smartphones and displays.
- Healthcare wearable devices (bio-signal measurement in smartwatches and smart rings).Healthcare wearable devices (bio-signal measurement in smartwatches and smart rings).
- Industrial equipment (ultra-precision speed control systems, precision sensing).Industrial equipment (ultra-precision speed control systems, precision sensing).
- Autonomous vehicles (LiDAR systems, automotive LED lighting: headlights, adaptive driving beams, daytime running lights, pixel LEDs).Autonomous vehicles (LiDAR systems, automotive LED lighting: headlights, adaptive driving beams, daytime running lights, pixel LEDs).
- Electric vehicles (high-speed chargers, power semiconductors).Electric vehicles (high-speed chargers, power semiconductors).
- Solar power generation systems.Solar power generation systems.
- Space and defense (military S-band radar, electronic warfare, jamming systems, aviation/ground communication equipment, test equipment, space-grade power conversion systems, missile fuse switching devices).Space and defense (military S-band radar, electronic warfare, jamming systems, aviation/ground communication equipment, test equipment, space-grade power conversion systems, missile fuse switching devices).
- Robotics industry.Robotics industry.
- 5G/6G communication infrastructure and satellite communication.5G/6G communication infrastructure and satellite communication.
- OEM/ODM mass production foundry services.OEM/ODM mass production foundry services.
- South Korea (domestic market), China (collaboration with wearable specialist Oppo, participation in Hong Kong Electronics Fair), Taiwan (expanding sales to global lighting companies)South Korea (domestic market), China (collaboration with wearable specialist Oppo, participation in Hong Kong Electronics Fair), Taiwan (expanding sales to global lighting companies)
- United States (buyers participated in Hong Kong Electronics Fair)United States (buyers participated in Hong Kong Electronics Fair)
- Possession of 33 patents.Possession of 33 patents.
- Acquisition of KS Q 9100 aerospace quality certification (during the development of space-grade Schottky Barrier Diodes).Acquisition of KS Q 9100 aerospace quality certification (during the development of space-grade Schottky Barrier Diodes).
- Full process implementation of GaN RF power semiconductors, from design to manufacturing and measurement, using 100% domestic technology, based on core technologies transferred from the Electronics and Telecommunications Research Institute (ETRI).Full process implementation of GaN RF power semiconductors, from design to manufacturing and measurement, using 100% domestic technology, based on core technologies transferred from the Electronics and Telecommunications Research Institute (ETRI).
- Technological capability secured from GaN-on-Si epi-wafer growth to device design and process technology.Technological capability secured from GaN-on-Si epi-wafer growth to device design and process technology.
- Possession of essential core technologies for specialized semiconductor manufacturing, including novel device design technology, epi-growth micro-junction technology, and manufacturing process technology.Possession of essential core technologies for specialized semiconductor manufacturing, including novel device design technology, epi-growth micro-junction technology, and manufacturing process technology.
- Capability to achieve high yield rates through 'optical photolithography' technology for patterning semiconductor substrates using lasers.Capability to achieve high yield rates through 'optical photolithography' technology for patterning semiconductor substrates using lasers.
- Technology to overcome warping and cracking issues caused by differences in thermal expansion coefficients during the development of 8-inch silicon wafer-based GaN power devices.Technology to overcome warping and cracking issues caused by differences in thermal expansion coefficients during the development of 8-inch silicon wafer-based GaN power devices.